| 摘要 |
PURPOSE:To improve the critical current density of an oxide-base high temp. superconducting thin film by alternately performing irradiation with reactive hydrogen and oxygen treatment. CONSTITUTION:In a vacuum chamber, A-B-Cu-O oxide superconducting thin film 12 (where A is at least one element selected from among Tl, Bi and lanthanoids from the atomic number 63 Eu to the atomic number 71 Lu, and B is at least one element selected from among alkaline-earth elements such as Ca, Sr, Ba, Ra) is formed on a substrate 11 by using a target 13 in a high frequency magnetron sputtering device. In the growing process of the superconductor 12, reactive hydrogen consisting of hydrogen ion produced in a hydrogen ion gun is accelerated by high voltage power supply to irradiate the substrate with it. Then, O2 gas is supplied from a gas inlet 19 to the plasma producing chamber 16 where the O2 gas is partly changed into ozone and cast on the superconducting thin film 12. By alternately performing the treatment with hydrogen and the treatment with oxygen, the crystallinity of the thin film 12 is improved and the O2 content is precisely controlled so that the obtd. high temp. oxide superconducting film has large critical current density. |
