发明名称 PATTERNED LAYER FORMING METHOD
摘要 PURPOSE:To avoid the deterioration in the sensitivity and the resolving power of a chemically sensitized resist layer by a method wherein the chemically sensitized resist layer is immersed in an acid solution during the term until the first heat-treating step is performed for said resist layer coat-formed on a substrate. CONSTITUTION:A chemically sensitized resist layer containing an acid producing agent is coat-formed (a) on a silicon substrate 1 to be immersed in an acid solution (f). Next, the first heat-treating step (b) is performed for the chemically sensitized resist layer to form said resist the first heat-treated. Next, said resist layer the first heat-treated is exposed (c) after a specific pattern to form said resist layer pattern exposed. Next, the second heat-treating step (d) is performed for said resist layer pattern exposed to form said resist layer the second heat- treated and finally, a patterned layer 2 having the pattern corresponding to the exposed pattern is to be formed by developing step (e).
申请公布号 JPH06275513(A) 申请公布日期 1994.09.30
申请号 JP19930089324 申请日期 1993.03.24
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 NAKAMURA JIRO;TANAKA HARUYORI;BAN KOJI
分类号 G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/38
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