发明名称 |
PATTERNED LAYER FORMING METHOD |
摘要 |
PURPOSE:To avoid the deterioration in the sensitivity and the resolving power of a chemically sensitized resist layer by a method wherein the chemically sensitized resist layer is immersed in an acid solution during the term until the first heat-treating step is performed for said resist layer coat-formed on a substrate. CONSTITUTION:A chemically sensitized resist layer containing an acid producing agent is coat-formed (a) on a silicon substrate 1 to be immersed in an acid solution (f). Next, the first heat-treating step (b) is performed for the chemically sensitized resist layer to form said resist the first heat-treated. Next, said resist layer the first heat-treated is exposed (c) after a specific pattern to form said resist layer pattern exposed. Next, the second heat-treating step (d) is performed for said resist layer pattern exposed to form said resist layer the second heat- treated and finally, a patterned layer 2 having the pattern corresponding to the exposed pattern is to be formed by developing step (e). |
申请公布号 |
JPH06275513(A) |
申请公布日期 |
1994.09.30 |
申请号 |
JP19930089324 |
申请日期 |
1993.03.24 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
NAKAMURA JIRO;TANAKA HARUYORI;BAN KOJI |
分类号 |
G03F7/38;H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
G03F7/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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