发明名称 |
Semiconductor laser device |
摘要 |
According to this invention, a semiconductor laser device includes a compound semiconductor substrate, a double hetero structure formed on the compound semiconductor substrate and having an active layer and first and second cladding layers which interpose the active layer, a current blocking region formed in one facet portion of the double hetero structure in a resonator direction. A reflecting layer is arranged on the other facet of the double hetero structure in the resonator direction and has a reflectance higher than that of a natural cleavage surface, thereby shifting the oscillation wavelength of the laser device to a long wavelength side with respect to the wavelength of spontaneous radiation emitted from one facet of the double hetero structure.
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申请公布号 |
US5343486(A) |
申请公布日期 |
1994.08.30 |
申请号 |
US19920962725 |
申请日期 |
1992.10.19 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITAYA, KAZUHIKO;HATAKOSHI, GENICHI;NITTA, KOICHI |
分类号 |
H01S5/00;H01S5/028;H01S5/042;H01S5/06;H01S5/10;H01S5/12;H01S5/16;H01S5/223;H01S5/32;H01S5/323;(IPC1-7):H01S3/15 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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