发明名称 SELF-MATHING MULTILAYER WIRING AND ITS PREPARATION
摘要 PURPOSE: To electrically couple multilayer wirings for reducing the area of a through-hole by including the uppermost insulation layer, alternately providing a plurality of insulation layers and a plurality of conductors keeping an interval and then forming a through-conductor which extends passing through the continuous self-aligned hole. CONSTITUTION: A first insulation layer 231 is formed on a substrate 210' and a first conductive layer 221 is then formed on such insulation layer 231. A second conductive layer 222 is formed on the first conductive layer 221, between a second insulation layer 232 and a third insulation layer 233. Thereafter, a third conductive layer 223, namely, a through-conductor is deposited on the element, the upper surface thereof is covered and is then connected with the exposed surface of the first and second conductors 221, 222 and the exposed surface of the contact region 212. Thereby, an integrated circuit, having a higher wiring and integration densities, can be formed without widening the wiring intervals.
申请公布号 JPH06236930(A) 申请公布日期 1994.08.23
申请号 JP19930329081 申请日期 1993.12.24
申请人 SHARP CORP;SHARP MICROELECTRON TECHNOL INC 发明人 SHIEN TEN SUU;ROBAATO GEIRII PORACHIETSUKU
分类号 H01L21/768;H01L21/8244;H01L23/528;H01L23/532;H01L27/11 主分类号 H01L21/768
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