| 摘要 |
PURPOSE: To provide a capacitor with a large effective surface area by providing a double cylinder shape that consists of an inner cylinder and an outer cylinder being connected to the source region of a transistor and providing a first electrode, a dielectric film, and a second electrode. CONSTITUTION: A first conductive layer 50 is formed on a semiconductor substrate and then a first substance layer and a second substance layer are formed on the first conductive layer. A first conductive layer pattern with a groove for limiting a step part that protrudes due to the anisotropic and partial etching of the first conductive layer 50 with each cell unit is formed. After a first substance pattern is removed by wet etching, the exposed part of a first conductive layer pattern 50a is subjected to anisotropic etching until the surface of the spacer layer 44 between second spacers 70b is exposed to the outside, thus completing a double-cylinder-shaped electrode 100 in a pattern being limited by each cell unit. |
