发明名称 BURN-IN METHOD OF SEMICONDUCTOR DEVICE
摘要 Since the power-supply and/or signal-transmission wiring layers (12, 13; 14) connected to the semiconductor chip regions (11) are formed, each individual integrated circuit can be burned in on the semiconductor wafer (10) and, in other words, an integrated circuit can be burned in on a wafer level. The integrated circuit can thus be burned in at the end of a wafer process. An assembled semiconductor device is subjected to a high temperature or a high humidity, for checking the reliability of the assembled device.
申请公布号 KR940006577(B1) 申请公布日期 1994.07.22
申请号 KR19900009729 申请日期 1990.06.29
申请人 TOSHIBA CO., LTD. 发明人 FURUYAMA, TORU
分类号 H01L21/66;G01R31/28;G11C11/401;G11C11/407;G11C29/00;G11C29/06;H01L21/768;H01L21/8242;H01L23/528;H01L27/108;(IPC1-7):H01L21/66 主分类号 H01L21/66
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