发明名称 High density interconnect structure including a chamber
摘要 A high density interconnect structure is rendered suitable for the packaging of overlay sensitive chips by providing a cavity in the high density interconnect structure which spaces the sensitive surface of such chips from the overlying high density interconnect structure in a manner which prevents undesired interactions between the dielectric of the high density interconnect structure and the chip.
申请公布号 US5331203(A) 申请公布日期 1994.07.19
申请号 US19930141460 申请日期 1993.10.25
申请人 GENERAL ELECTRIC COMPANY 发明人 WOJNAROWSKI, ROBERT J.;EICHELBERGER, CHARLES W.;KORNRUMPF, WILLIAM P.
分类号 H01L23/538;(IPC1-7):H01L23/02;H01L23/12 主分类号 H01L23/538
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