发明名称 |
High density interconnect structure including a chamber |
摘要 |
A high density interconnect structure is rendered suitable for the packaging of overlay sensitive chips by providing a cavity in the high density interconnect structure which spaces the sensitive surface of such chips from the overlying high density interconnect structure in a manner which prevents undesired interactions between the dielectric of the high density interconnect structure and the chip.
|
申请公布号 |
US5331203(A) |
申请公布日期 |
1994.07.19 |
申请号 |
US19930141460 |
申请日期 |
1993.10.25 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
WOJNAROWSKI, ROBERT J.;EICHELBERGER, CHARLES W.;KORNRUMPF, WILLIAM P. |
分类号 |
H01L23/538;(IPC1-7):H01L23/02;H01L23/12 |
主分类号 |
H01L23/538 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|