| 摘要 |
PURPOSE: To form a self-aligning contact hole in an integrated semiconductor circuit with orbital patterns arranged therein on a semiconductor substrate. CONSTITUTION: Orbital patterns 3 are formed so that the interval D1 between two orbital patterns on a conductive region 2 may be wider than the interval D0 on the adjacent semiconductor substrate 1 to form the interlayer insulating layers 4 in thickness d4 meeting the inequalities of D1 /2>d4 >=D0 /2 or L1 /2>=d4 . Finally, respective steps to anisotropically etching the interlayers 4 for at least partially exposing the conductive region 2 are performed so that a contact hole 5 may at least partially expose the conductive region 2 in the deep part between the two orbital patterns 3. |
