发明名称 SILICON NITRIDE SINTERED COMPACT FOR USE AT ELEVATED TEMPERATURE
摘要 PURPOSE:To obtain a silicon nitride sintered compact improved in mechanical strength characteristics at elevated temperatures of as high as >=1200 deg.C, esp. creep-resistant characteristics and instantaneous fracture-resistant characteristics. CONSTITUTION:This sintered compact consists mainly of (A) silicon nitride and (B) at least one kind of sintering auxiliary selected from yttrium oxide, ytterbium oxide, hafnium oxide, scandium oxide and lanthanum oxide, with the aluminum content thereof being <=500ppm.
申请公布号 JPH06191949(A) 申请公布日期 1994.07.12
申请号 JP19920359355 申请日期 1992.12.25
申请人 TOYOTA CENTRAL RES & DEV LAB INC 发明人 YAMADA KATSUNORI;KAMIYA NOBUO
分类号 C04B35/584;C04B35/58 主分类号 C04B35/584
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