Gaseous doping of tungsten oxide

摘要

The procsses disclosed is for preparing a film of fluorine-modified tungsten oxide on a substrate. The process comprises providing a tungsten oxide film on the substrate and then exposing the tungsten oxide film at an elevated temperature to a stream of a gaseous fluorocarbon. The exposure takes place for a time sufficient to modify the tungsten oxide with fluorine and form a film having modified infrared adsorption and reflectant properties.