| 摘要 |
PURPOSE:To provide a method of manufacturing a semiconductor memory wherein the lower end of a through-hole provided to a peripheral circuit region can be less decreased in diameter. CONSTITUTION:An SOG film 19 is formed on all the surface of a silicon substrate 1 so as to be filled into a space 2 formed between word lines 5a and 5d covered with an insulating film 9, and then the SOG film 19 is etched back so as to be left unremoved in the space 2. A polycrystalline silicon film 33 used for the formation of a side wall conductive layer is not filled into the space 2 but formed on the SOG film 19. Therefore, the side wall conductive layer can be lessened in overetching and set in height as required even if a silicon oxide film 25 is small in thickness, Therefore, when the silicon oxide film 25 is selectively removed by etching in a peripheral circuit region to form a tapered through-hole, since the silicon oxide film 25 is small in thickness, the lower end of the through-hole can be less deceased in diameter. |
