| 摘要 |
A semiconductor memory device includes a gate region of each driver transistor arranged obliquely with respect to a first direction of a chip; a source/drain region of each driver transistor arranged obliquely with respect to the first direction; contact windows arranged substantially straight with respect to the first direction and connecting each source/drain region of the driver transistors to a power supply line provided in the first direction; and contact windows arranged every one contact window in a zigzag manner with respect to the first direction and connecting each source/drain region of transfer gate transistors to a corresponding bit line. By the constitution, it is possible to reduce an area of memory cell regions resulting in a reduction in a chip area, and to cause respective driver transistors to have uniform characteristics and thus improve an operation reliability thereof.
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