| 摘要 |
PURPOSE:To form an independent semiconductor layer on a substrate by coupling reactors to a chamber common to each independent reaction systems thereby enabling the etching of the inwalls of reactors in some of a plurality of plasma reactors, when stacking films on the substrate. CONSTITUTION:The reactive gas supplied to first, second, and third reactors 4, 42, and 43 is supplied each from supply systems 6, 27, and 28. Each gas is supplied to the first reactor 4 from the supply system 6 through a flow meter 50 and a solenoid valve 51. At the inwall of the reactor, a flake occurs when it makes a film five to thirty times, so in such casing, it is removed by plasma etching with CF4 or NF4. This cleaning can be achieved by etching of the inwall of the reactor without forming a film, in some of a plurality of reactors, also in film stacking process. Hereby, it become possible to couple a batch method with continuous method. |
