发明名称 MASK FOR EXPOSURE AND EXPOSURE METHOD
摘要 PURPOSE:To enable the arrangement of intricate shifters by combination with the patterns of chromium films by forming the parts where light of a specific phase is transmitted by LSI patterns in order to form the fine patterns by applying this specific phase and further, etching the parts of one phase on one surface of a quartz plate. CONSTITUTION:A pertures where the light of 0 deg. phase passes and apertures where the light of 180 deg. phase passes line up in alternately changing order from the pattern data of the LSI. The apertures of 0 deg. phase and 180 deg. are so set that the apertures having no other patterns existing around these apertures are enclosed by the apertures of the different phases around the apertures. Further, the combinations of these intricate apertures are easily attained by etching the parts corresponding to the one phase from the one surface of the quartz. Exposure is executed by using the mask formed in such a manner.
申请公布号 JPH06138639(A) 申请公布日期 1994.05.20
申请号 JP19920288534 申请日期 1992.10.27
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MITSUSAKA AKIO
分类号 G03F1/30;G03F1/68;G03F1/80;G03F7/20;H01L21/027 主分类号 G03F1/30
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