Method for forming a bipolar transistor.

摘要

A method for forming a bipolar transistor employs a single drive-in step to form an emitter (16) and a base (14). A layer (30) of spin on glass containing a plurality of dopants is spun onto a collector (12) in a silicon substrate. The dopants are driven into the collector (12) to form the base (14) and emitter (16). The method employs diffusion instead of implanting to form shallow and abrupt junctions without damage to the crystal lattice of the silicon. <IMAGE>