| 摘要 |
PURPOSE:To produce an aluminum nitride substrate fit for removal of an etching resist with an aq. alkali soln. CONSTITUTION:A metallizing layer is formed on the surface of an aluminum nitride sintered compact subjected to surface oxidation treatment, this metallizing film is coated with an etching resist and etching is carried out. The etched resist is then removed with an aq. alkali soln. The aluminum nitride sintered compact is preferably subjected to surface oxidation treatment at 1,000-1,150 deg.C in the air having <=-10 deg.C dew point. |
