| 摘要 |
<p>PURPOSE:To control temperature with high precision and uniformity by providing a through hole in the depth direction and a groove for distributing a gas for heat conduction in an electrostatic chuck which holds a sample substrate on a table. CONSTITUTION:An electrostatic chuck 5 of an apparatus A for plasma processing of a sample substrate 3 in a vacuum chamber 6, comprises a conductor 1 and a dielectric 2 containing the conductor therein. Static electricity generated in the dielectric 2 when the conductor is impressed with a voltage, is utilized to hold a sample substrate 3 on a mount table 4 in a manner of freely attaching or removing it. The center of the electrostatic chuck 5 is arranged in a similar figure as the sample substrate 3, and an appropriate number of through holes 8, outermost periphery of which is 5 to 10mm less than the periphery of the electrostatic chuck 5, are formed in the depth direction. Further, a groove 7 distributing a gas for heat conduction is formed at a joint with the electrostatic chuck 5 of the mount table 4. Temperature control of the sample substrate 3 can be performed with high precision and g processing with good energy efficiency can be performed.</p> |
