| 摘要 |
PURPOSE:To provide a semiconductor device having sufficient capacitance by using capacitor electrodes in the shape of a dual elliptical cylinder, which are formed according to the same layout rule and in the same number of process steps of the conventional method. CONSTITUTION:Minute annular grooves are formed by phase shifting of negative photoresist. The grooves are used to form capacitor electrodes 115 of phosphorus-doped polysilicon in the shape of a dual elliptical cylinder. Such capacitor electrodes are capable of providing capacitance equivalent to STC cells. This process for capacitor electrodes, considerably simplified, prevents electrodes from peeling, and thus improving yield. |
