| 摘要 |
PURPOSE:To suppress generation of a small void caused by ruggedness on the laminated surface of a semiconductor substrate by a lamination method, increase a joint force, and then resist stress due to thermal expansion for further reinforced joint. CONSTITUTION:The title manufacture of a semiconductor substrate for forming a plurality substrates by laminating them is provided with a process for forming an insulation layer 2 on the surface of a first substrate 1 as a substrate to be laminated, a process for forming a joint promotion layer 3 by injecting impurities for increasing the joint force for lamination on the surface of the insulation layer 2, a process for laminating a second substrate 4 to the joint promotion layer 3 of the first substrate, and a process for joining the laminated substrate by heating.
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