| 摘要 |
<p>PURPOSE:To prevent the occurrence of dust and the reaching of cracks to the inside of chip by providing a groove, the bottom of which reaches at least the interlayer insulation film through a passivation film at the end portion of a scribe region adjacent to an element region. CONSTITUTION:A field oxide film 2 is formed in an element region 20 except a scribe region 30 on a semiconductor substrate 1. A first interlayer insulation film 3 is formed on the element region and a second interlayer insulation film 4 is formed above it, and a third interlayer insulation film 5 above the second one. A bonding pad portion formed with a third metal wiring 6 is provided on the third interlayer insulation film, and an opening is provided in the passivation film 7 of the bonding region on the bonding pad. And specially provided is a groove 8 which is located from the passivation film 7 to the second interlayer insulation film 4. Therefore, cracks inside the chip can be prevented and dust can be eliminated.</p> |
