| 摘要 |
PURPOSE:To provide a compound semiconductor device which is excellent in wettability to solder and stable in processing and where a rear metal is hardly separated off, where the semiconductor device is formed of a GaAs or InP wafer. CONSTITUTION:Ti, Ni, and Au are deposited on the rear of a compound semiconductor pellet 5, and the pellet 5 is mounted on a package 6 with an Sn solder 7. For instance, a Ti layer 2 of 100 to 1000Angstrom thickness, an Ni layer 3 of 100 to 1000Angstrom thickness, and an Au layer 4 of 1000 to 10000Angstrom thickness arc deposited on the rear of the pellet 5.
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