| 摘要 |
For passivation of an integrated circuit device, a film of silicon dioxide is deposited over the integrated circuit device. A film of silicon nitride is deposited over the film of silicon dioxide. The film of silicon nitride and the film of silicon dioxide are etched using a single passivation mask to expose the bond pads of the integrated circuit device. Spacer regions of silicon nitride are placed over edges of the film of silicon dioxide exposed by the etching. The spacer regions may be placed by depositing a second film of silicon nitride over the film of silicon nitride. This second film of silicon nitride covers the metal bond pads and the exposed edges of the film of silicon dioxide. An anisotropic etchback of the second film of silicon nitride is performed to expose the metal bond pads while leaving spacer regions which cover the edges of the film of silicon dioxide.
|
