ISOLATION METHOD AND DEVICE OF SEMICONDUCTOR

摘要

forming an insulating layer on a semiconductor substrate and an open area for the definition of element separation region; forming the 1st spacer in the open area and exposing the substrate limited by the 1st spacer; forming a DSP layer with the same impurities as the substrate; heating the substrate for making a channel stopper by the diffusion of impurities from the DSP layer to the substrate; forming spacers (S) separated by the DSP layer by removing the insulating layer and depositing an oxide layer; forming an element separation region by growing the thermal oxidation layer over the whole surface of substrate.