| 摘要 |
PURPOSE:To prevent increase of junction capacitance and junction leak current without modifying fabrication process. CONSTITUTION:A gate oxide 10 is formed between diffusion regions 4, 6, a silicon oxide 8 thicker than the gate oxide is formed thereon, and a word line 12 is formed in the direction crossing with the diffusion regions 4, 6 on the gate oxide 10 and the silicon oxide 8. In order to program such that a selected memory cell is not turned ON upon application of a power supply voltage Vcc on the word line 12, boron is implanted into a hatched region 28 of the memory cell. Resist pattern for implanting boron ions into the region 28 of the memory cell has such shape, e.g. diamond shape, as protruding from the word line 12 only between the diffusion regions 4, 6. |
