| 发明名称 |
Method for forming an electrode for a compound semiconductor |
| 摘要 |
On the surface of n-type layer of Ga1-xAlxAs (0</=x</=1) having n-type layer, Au layer is formed as a first layer, and alloying treatment is performed after Ge layer, Ni layer and Au layer are sequentially formed. The first Au layer, the second Ge layer, the third Ni layer and the fourth Au layer have the following thickness: -1st layer Au 10-100 ANGSTROM -2nd layer Ge 50-200 ANGSTROM -3rd layer Ni 50-200 ANGSTROM -4th layer Au 200-1000 ANGSTROM - Thus, it is possible to form an ohmic electrode, which has low contact resistance and does not develop ball-up phenomenon.
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| 申请公布号 |
US5284798(A) |
申请公布日期 |
1994.02.08 |
| 申请号 |
US19920966535 |
申请日期 |
1992.10.26 |
| 申请人 |
MITSUBISHI KASEI POLYTEC CO.;MITSUBISHI KASEI CORPORATION |
发明人 |
IBUKA, TOSHIHIKO;NOGUCHI, MASAHIRO |
| 分类号 |
H01L21/28;H01L21/285;H01L29/43;H01L29/45;(IPC1-7):H01L21/441;H01L21/324 |
主分类号 |
H01L21/28 |
| 代理机构 |
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