| 摘要 |
PURPOSE:To provide a semiconductor storage device having a stack cell capacitor which can prevent a soft error due to an alpha-ray and improve reliability. CONSTITUTION:In a dynamic random access memory hating a stack capacitor structure, a lower electrode constituting a capacitor is formed of a laminate film of a transition metal film, a silicide film of a transition metal or an alloy film 7 thereof and of a polysilicon film 14. As for the materials of the lower electrode W Mo Ti; W2Si, Mo2Si, Ti2Si; TiW, TiN; or poly-Si/W, poly-Si/Mo, poly-Si/Ti, for instance, are selected therefor. |
