| 摘要 |
PURPOSE:To make efficiency of manufacture higher by a construction wherein the bonding area of semiconductor chip is extended along the lead wire direction in case of wire bonding wherein the wire of chip reaches the bonding area outside this semiconductor device. CONSTITUTION:The bonding area 2E, 2B of semiconductor chip 1 is contrived so that bonding area's longer side may be pointed along the wire 3 as indicated in the drawing. By this construction the areas 2E' 2B' are useless, so they are utilized as the forming area for the other kind of divided element. Thus it is desirable that the converted active areas are increased by lessening the bonding areas by the unit area of divided element in case of the transister in which a device consists of many divided elements. By this method the shortest wiring is achievable and the manufacturing efficiency of wire bonding and moreover increase of active area is achievable. |
