| 摘要 |
<p>PURPOSE:To reduce the whole mounting area and deterioration of the signal characteristics in the high frequency region by applying connecting technologies which ensure vertical consecutive connection of a plurality of integrated circuit chips, and solder bump connection between electrodes of the chips or between the electrodes and pads on a dielectric substrate. CONSTITUTION:A first dielectric substrate 4 and a second dielectric substrate 8 mounting an integrated circuit (IC) chip 9, both of which mount an integrated circuit chip 9 respectively, are integrated as a multi-chip module. At that time, connection is made by a bump 14 between an input signal electrode 5 of the IC chip 9 on the first dielectric substrate 4 and an output signal electrode 15; between a control signal electrode 17 and a power source electrode 18; and between a pad 7 which transmits control signal and power of source to the IC chip 9 on the second dielectric substrate 8 or the opposite pad 7 on the second dielectric substrate 8 and the electrodes of the IC chip 9. The bump 14 is formed in each electrode of each IC chip 9. A sealing insulator 13 is provided on the peripheral part of the substrate 4 and the substrate 8, and connecting through the bump 14 and sealing with the insulator 13 are made at the same time.</p> |
