| 摘要 |
PURPOSE: To manufacture a superconducting element by microlithographically providing the superconductive element with a Ba2 Cu3 O5+x thin film, deposited on a substrate and a dopant thin film deposited on the surface of Ba2 Cu3 O5+x thin film by patterning, diffused into the thin film and reacting with Ba2 Cu3 O5+x . CONSTITUTION: A thin-film layer 14 deposited on a substrate 12 consists of Ba2 Cu3 O5+x (0<X1). Then a dopant layer 16 is applied to the surface of the layer 14, and a photoresist layer 18 is deposited. Then the photoresist 18 is exposed to light irradiation through a mask having objective circuit constitution and developed by microlithography. Then a chip 10 is heated up to a certain temperature for a certain time sufficient for diffusing the layer 16 into the layer 14. As the result of the diffusion, the dopant layer 16 of Y2 O3 or Pr2 O3 reacts with the thin-film layer 14 of Ba2 Cu3 O5+x .
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