OPTIMUM-STACK TYPE CAPACITOR DRAM CELL UTILIZING VAPOR DEPOSITION OF SACRIFICE OXIDE FILM AND CHEMICAL/ MECHANICAL POLISHING

摘要

PURPOSE: To manufacture a three-dimensional-stack type container capacitor by improving the existing stack-type capacitor manufacturing process. CONSTITUTION: Two oxide films 21 having different etching rates are etched. Thus, a polysilicon container structure 51, which is indepent by itself, is formed. An oxide film having a high etching rate of 100% is removed in this way. Then, the oxide film 21 surrounding a specified amount of the container structure 51 are made to remain as it is. Thus, a cell is used as a memory node electrode.