| 摘要 |
A power MESFET comprises a layer (4) of a III-V semi-conductor material (particularly gallium arsenide) not exceeding 20 mu m (preferably not exceeding 10 mu m) in thickness, one face of the layer (4) being provided with an active surface zone (7) and source (41)-, drain (42)-, and gate (43)- electrodes, and the opposite rear face with a heat-dissipating metal coating (51). In production, the layer (4) is initially supported on a GaAs substrate which is etched away after an auxiliary carrier is fixed to the free face of the layer (4). <IMAGE> |
