发明名称 |
Process for the thin etching of substrates |
摘要 |
In a process for the thin etching of substrates which can be etched by chemical etching agents, a predeterminable substrate thickness is obtained with an unaffected single-crystal grid structure of the substrate in that the substrate is irradiated during the etching process by radiation impinging substantially perpendicularly to its surface, the substrate consists of a radiation absorbent material and the wavelength of the main component of the radiation is such that the absorption length of the radiation of this wavelength in this substrate material is greater than the desired substrate thickness.
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申请公布号 |
US5279703(A) |
申请公布日期 |
1994.01.18 |
申请号 |
US19930962186 |
申请日期 |
1993.03.05 |
申请人 |
FRAUNHOFER GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
HABERGER, KARL;BUCHNER, REINHOLD;BOLLMANN, DIETER |
分类号 |
H01L21/302;H01L21/306;H01L21/762;H01L27/12;(IPC1-7):H01L21/306;B04C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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