| 摘要 |
PURPOSE:To improve the reliability and the manufacturing yield of devices, by preventing the scattering of etching residue of an interlayer insulating film after an alignment mark is used, in a position alignment method between a mask and a wafer at the time of exposure. CONSTITUTION:A position alignment mark constituted of a main scale 2 formed on a wafer 1 and a vernier 5 formed on a mask 4 is used. From above the mask arranged on the wafer, light is casted to scan the position alignment mark. Reflection position of the light is detected as the height of a waveform. In the above position alignment method, the shape of the position alignment mark is so formed that the vernier 5 covers the periphery of the main scale 2 when the vernier 5 is superimposed on the main scale 2. The difference of heights of the waveforms on the vernier 5 and the main scale 2 is detected. |
