| 摘要 |
PURPOSE:To provide a method for forming a metallized layer on an aluminum nitride substrate, having high bond strength between an aluminum nitride substrate and a metallized layer formed on the substrate, not deteriorating bond strength even in the case of using semiconductor chips placed on the aluminum nitride substrate at high temperature. CONSTITUTION:Before a metallized layer is formed on the surface of an aluminum nitride substrate 11, a YAlO3 grain boundary layer 12 on the surface layer part of the aluminum nitride substrate is ground to make Y3Al5O12 grain boundary layer 13 appear. A metallized layer is formed on the Y3Al5O12 grain boundary layer 13. The Y3Al5O12 grain boundary layer 13 has excellent wetting to a metal (W, Mo or TA) constituting the metallized layer, bond strength of the metallized layer is raised. |
