| 摘要 |
<p>PURPOSE:To make compact the cell of a semiconductor storage, device using an MFS-FET in which a ferroelectric film is interposed between a gate electrode and a semiconductor substrate, and to provide the semiconductor storage device in which an error can not be generated by removing the stray potential of the gate electrode. CONSTITUTION:A potential equivalence means R is connected between the gate electrode (g) and the semiconductor substrate of a nonvolatile memory transistor TM in which the ferroelectric film is interposed between the gate electrode and semiconductor substrate, in parallel to the transistor. And also, the gate electrode is connected with the middle point of two serially connected diodes D1 and D2, and the potential can be independently impressed to both the edges of the pertinent two diodes. Thus, memory cells Q1 and Q2 are constituted as mentioned above, and arrayed like a matrix.</p> |
