| 摘要 |
PURPOSE:To provide a production method by which a SiC sintered body having a thin wall and small porosity, excellent thermal shock resistance and oxidation resistance is obtd., the amt. of carbon remaining in the sintered body can be decreased, and dimensional accuracy is improved. CONSTITUTION:The SiC sintered compact is obtd. by sintering a compact and contains 50-99.5 pts.wt. silicon carbide and 50-0.5 pts.wt. silicon. LC(002) of carbon which constitutes the sintered body is <=1000Angstrom . This SiC sintered body is obtd. by melting silicon and making it permeate to the compact containing >=99wt.% of carbonaceous material consisting of carbon with <=1000Angstrom LC(002) at 1400-2500 deg.C in a nonoxidative atmosphere under reduced pressure or in vacuum, and then calcining. |
