| 摘要 |
<p>A semiconductor device comprising a main circuit having a p-channel MOSFET formed on the surface of the substrate and an n-channel MOSFET formed on the p-type well region which is formed on the n-type Si substrate (chip), an input/output (I/O) circuit formed on the substrate, and a substrate bias generating circuit formed on the substrate, characterized by controlling the substrate bias generating circuit via the I/O circuit, and varying a bias supplied to the substrate and the p-type well region, in accordance with the operation mode of the main circuit. <IMAGE></p> |
