| 摘要 |
PURPOSE:To avoid a short-circuit between a lead wire bonded onto the surface of a semiconductor pellet and the pellet by providing an insulator such as glass on the outer periphery of the pellet formed with a pn junction. CONSTITUTION:A SiO2 film 2 is coated on the surface of a semiconductor pellet 1 such as a thyristor already diffused as required, predetermined openings are perforated at the film 2 to etch through the openings the pellet 1 and to perforate annular grooves 1a and 1b through a pn junction and at the position except the pn junction region, respectively. Glasses 3a and 3b are then adhered into the grooves 1a and 1b, respectively, heated and seized to the pellet 1. Thereafter, an opening is again perforated at the film 2, an electrode 4 is mounted at exposed diffused region, an electrode 8 provided on the back surface of the pellet 1 is mounted on a stem 5, lead wires 9a and 9b are bonded to the electrode 4, and the entirety is then molded with resin. Thus, even if the wires 9a and 9b are bent, they are not short-circuited with the pellet 1. |
