发明名称 |
Process for improved doping of semiconductor crystals |
摘要 |
Doping of IIIB-VB semiconductor crystals grown by the liquid encapsulated Czochralski techniques is improved by introducing a metal to the crucible. The metal is characterized as having a lower melting temperature and a lower free energy of oxide formation than the dopant element.
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申请公布号 |
US5259916(A) |
申请公布日期 |
1993.11.09 |
申请号 |
US19920875613 |
申请日期 |
1992.04.28 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RAU, MANN-FU;WANG, FAA-CHING M.;KURZ, JIMMY D. |
分类号 |
C30B15/00;C30B15/04;(IPC1-7):C30B15/04 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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