发明名称 SEMICONDUCTOR POSITION SENSOR
摘要 <p>PURPOSE:To provide a title device which outputs only a photocurrent corresponding to incident light with frequency characteristics kept constant. CONSTITUTION:A structure comprises: a plurality of microimpurity layers 29 consisting of a predetermined impurity and buried in strip form by isolation in the surface zone on the light receiving side of a high resistance I layer; a plurality of bias resistances 36 connected to every microimpurity layer 29; impurity layers consisting of an impurity different from that of the microimpurity layer 29, buried in the other end of the high resistance I layer different from the microimpurity layer, and set at a predetermined bias potential; a plurality of coupling capacitances, respectively weighted to predetermined capacitances, which are provided to microimpurity layers respectively in pairs; a first output terminal 34 connected to a plurality of coupling capacitances and connected in common to an added coupling capacitance equal to the capacitance value of these coupling capacitances and one plurality of coupling capacitances; and a second output terminal 35 connected in canon to the other plurality of coupling capacitances.</p>
申请公布号 JPH05291615(A) 申请公布日期 1993.11.05
申请号 JP19920088920 申请日期 1992.04.09
申请人 HAMAMATSU PHOTONICS KK 发明人 KYOMASU MIKIO
分类号 G01B11/00;G01C3/06;G02B7/28;H01L31/16;(IPC1-7):H01L31/16 主分类号 G01B11/00
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