| 摘要 |
PURPOSE:To obtain a sensor having high sensitivity over the whole range of visible light and no variation in sensitivities by a method wherein the grade of potential low to transported carriers is generated in a photoconductive layer exposed between electrodes, when a pair of electrodes are provided on the photoconductive layer at an interval, thus forming it into the titled device. CONSTITUTION:An amorphous Si layer 32 non-doped with impurities is deposited on a glass substrate 31 to the thickness of about 0.85mum, and thereon an amorphous Si layer 33 containing boron in a very small amount is adhered to the thickness of about 0.15mum by the glow discharge of mixed gas whose concentration of B2H6 is diluted to 20ppm. Next, ohmic contact layers 34 are formed at an interval, the electrodes 35-1 and 35-2 are mounted thereon, respectively, and the interval part produced therebetween is used as a photo receiving part 36. In this constitution, the values of activation energy at the dark conductivities of the layers 33 and 32 are prescribed to 0.88eV and 0.56eV respectively in terms of the thickness of 1mum. |
