| 摘要 |
<p>PURPOSE:To shorten the time for electron beam-exposing and to improve the processing capacity in mask production by eliminating the need for forming checkered patterns to provide a light shielding effect with electron beam- exposing. CONSTITUTION:The structure of the phase shift mask is constituted by previously forming the checkered shifter film patterns 2 having the light shielding effect by an optical transfer method over the entire surface of a glass substrate 1, then forming the patterns of a polymer film 6 erasing the light shielding effect thereon by an electron beam exposing method.</p> |
