| 摘要 |
PURPOSE:To reduce adverse influences such as etching residues due to ground steps and decreases in finish dimensions of a storage node electrode in formation of a capacitor storage node electrode with regard to the structure of memory cell of stacked cell structure and its manufacture. CONSTITUTION:An insulating film which overlies a switching transistor formed over a semiconductor substrate 101 is made in a double-layer structure of a thin insulating film 107 about 100nm or less thick and a thick insulating film 108 about 400nm or more thick, where the insulating film 108 is flattened by heat treatment and pierced by a contact hole 109, and the contact hole 109 is inner-walled with an insulating film 110, then capacitors 111, 112, 113 are formed. |
