| 摘要 |
<p>A method for fabricating a charge-coupled device includes the steps of forming a photoelectric conversion region (3) and a charge transfer region (4) within a surface region of a semiconductor region of a first conductivity type by introducing impurities of a second conductivity type, an element isolation region (5) by introducing impurities of the first conductivity type. The element isolation region (5) defines the photoelectric conversion region (3) and the charge transfer region (4) and also defines a charge-read-out gate region (9). The impurities of the first conductivity type are introduced by using a mask pattern which allows a uniform channel width at the charge transfer region (4). The mask pattern takes into account the lateral diffusion which develops during the thermal process applied after the formation of the element isolation region (5) and is thus set back from the edge line of the charge transfer region (4). The uniform channel width at the charge transfer region (4) suppresses the occurrence of potential dips caused by narrow channel effects so that efficiency of charge transfer is enhanced. <IMAGE></p> |
