| 发明名称 |
Gallium nitride group compound semiconductor laser diode |
| 摘要 |
A gallium nitride group compound semiconductor laser diode includes at least one pn junction layer disposed between an n-type layer and a p-type layer. The n-type layer is formed from a gallium nitride group compound semiconductor material defined by the composition equation (AlxGa1-x)yIn1-yN (where 0</=x</=1 and 0</=y</=1). The p-type layer, doped with an acceptor impurity, is obtained by electron beam irradiating a gallium nitride group compound semiconductor material defined by the composition equation (Alx'Ga1-x')y'In1-y'N (where 0</=x'</=1, 0</=y'</=1, x=x' or x NOTEQUAL x', and, y=y' or y NOTEQUAL y'). The improved gallium nitride group semiconductor laser diode of the present invention is found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions.
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| 申请公布号 |
US5247533(A) |
申请公布日期 |
1993.09.21 |
| 申请号 |
US19910812913 |
申请日期 |
1991.12.26 |
| 申请人 |
TOYODA GOSEI CO., LTD.;AKASAKI, ISAMU;AMANO, HIROSHI |
发明人 |
OKAZAKI, NOBUO;MANABE, KATSUHIDE;AKASAKI, ISAMU;AMANO, HIROSHI |
| 分类号 |
H01L33/06;H01L33/12;H01L33/14;H01L33/32;H01L33/34;H01L33/38;H01S5/00;H01S5/02;H01S5/042;H01S5/32;H01S5/323 |
主分类号 |
H01L33/06 |
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