METAL LAYER CONTACT FORMING METHOD

摘要

The method comprises (a) forming a second polysilicon layer (7) on a given layer and then forming a first insulation layer (3) on the whole surface including the second polysilicon layer, (b) forming Via Hole (10) by removing a part of the first insulation layer on the second polysilicon layer, (c) forming a first polysilicon layer (4) on a region including the Via Hole and connecting with the second polysilicon layer to form a second insulation layer (5) on the whole, (d) forming a contact hole (20) by removing a part of the second insulation layer on the Via Hole, and (e) forming thereon metal layer (6) and connecting with the first polysilicon layer so that the contact hole is placed on the Via Hole and its area is less than that of the Via Hole.