| 摘要 |
The dual-gate transistor having the simple process of only two masks and two implanting processes, is prepared by defining N-MOS and P-MOS areas on a substrate (1), forming N-type wall (2) at P-MOS area, forming a field oxide film (3) to isolate N-MOS area with P-MOS, coating gate oxide film (4), polycrystalline silicon layer (5) and thin nitride film (1) on all the area in order, patterning the three coated films (11,5,4) to gate electrode pattern, heat-oxidizing to form oxide film (12) at only the naked substrate surface, implanting N-type impurity with high concn. at N- MOS area, implanting P-type at P-MOS area in the same way.
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