| 摘要 |
PURPOSE: To prevent breakage of MOS transistors by excess carriers by a method, wherein a high concentration P-well is dividedly formed and each conductive layer is coupled to a source electrode. CONSTITUTION: When MOS transistors are turned off, excess carriers are generated between a substrate of the MOS transistors and a well region 115. The excess carriers flow along a conductive layer 110, composed of a polysilicon sheet resistance through a source electrode 112 coupled to the well region 115, forming a current path for a source electrode 107. Then, the excess carriers not only in a P-well region 116 under a gate-bonding pad 11 but also in the P-well region 115 under a field oxide film 104 flow in source electrodes 112, 107 which are in a grounding state. For this reason, a breakage phenomenon of switching MOS transistors can be stopped. |
