| 摘要 |
PURPOSE:To easily form a fine resist pattern with especially high sensitivity, high resolution and high contrast in a fine pattern forming material and pattern forming method utilizing electron beam lithography technology for fine processing of semiconductor devices. CONSTITUTION:A semiconductor silicon substrate surface 11 is coated with a polymer organic film in the thickness of 2mum as a lower layer film 12 and is then baked. The surface is further coated with an electron beam resist 13 and is then baked. Next, the electron beam lithography is carried out on the surface and the surface is then baked also. Thereafter, this wafer is developed for a minute with an organic alkali aqueous solution to obtain an accurate and fine positive resist pattern 13p. Moreover, using such a resist pattern as a mask, the lower layer film 12 is etched. Thereby, a highly accurate fine resist pattern can be formed easily and accurately with a high aspect ratio without allowing a pattern size shift in the etching process. |
