| 摘要 |
<p>PURPOSE:To prevent a drain bus line from reducing at the time of forming a finer gate electrode. CONSTITUTION:This process for production is constituted by including a stage for forming the drain bus line 5 on a transparent substrate 1, a stage for forming a source electrode 9 of a transistor and a drain electrode 8 for coating the drain bus line 5 by a transparent conductive material, a stage for successively depositing a contact layer 10, an operating semiconductor layer 11, an insulating layer 12 and a conductive layer 13 over the entire surface, a stage for covering the gate region from the source electrode 9 to the drain electrode 8 by a mask 14, etching away the part from the conductive layer 13 to the contact layer 10 and forming the conductive layer 13 remaining under the mask 14 as the gate electrode of the transistor and a stage for reducing the gate electrode by etching at least the side thereof.</p> |
